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HUF75309D3 Datasheet PDF - Fairchild Semiconductor

Part NameDescriptionManufacturer
HUF75309D3 No description available. Fairchild
Fairchild Semiconductor Fairchild
Other PDF  no available.
HUF75309D3 Datasheet PDF : PDF DOWNLOAD   
HUF75309P3 image

These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products.

Features
• 19A, 55V
• Simulation Models
    - Temperature Compensated PSPICE® and SABER™ Models
    - SPICE and SABER Thermal Impedance Models Available on the WEB at: www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
    - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards”

 

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