Ordering number : ENN634E
Diffused Junction Type Silicon Diode
2.6A Power Rectifier
• Plastic molded type.
• Glass passivation for high reliability.
• Peak reverse voltage : VRM=200, 600V.
• Average rectified current : IO=2.6A.
unit : mm
Absolute Maximum Ratings at Ta=25°C
Peak Reverse Voltage
Average Recitified Current
Surge Forward Current
Electrical Characteristics at Ta=25°C
Ta=40°C, with 2 Cu fins of 20!20!1mm3
50Hz sine wave, 1 cycle
VR : At each VRM
--30 to +150
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
41000 GI IM / 53098 HA (KT) / D218 TA, TS No.634-1/3