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IRFS654A View Datasheet(PDF) - Inchange Semiconductor

Part NameIRFS654A Iscsemi
Inchange Semiconductor Iscsemi
DescriptionN-Channel MOSFET Transistor
'IRFS654A' PDF : 2 Pages
1 2
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFS654A
FEATURES
·Avalanche Rugged Technology
·Rugged Gate Oxide Technology
·Lower Input Capacitance
·Improved Gate Charge
·Extended Safe Operating Area
DESCRIPTION
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VDSS
Drain-Source Voltage
VGS
Gate-Source Voltage-Continuous
ID
Drain Current-Continuous
IDM
Drain Current-Single Pluse
PD
Total Dissipation @TC=25
TJ
Max. Operating Junction Temperature
Tstg
Storage Temperature
VALUE UNIT
250
V
±30
V
12
A
48
A
50
W
-55~150
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Rth j-a
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
MAX
2.5
62.5
UNIT
/W
/W
isc websitewww.iscsemi.cn
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