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LS302 View Datasheet(PDF) - Micross Components

Part NameLS302 MICROSS
Micross Components MICROSS
DescriptionLinear Systems High Voltage Super-Beta Monolithic Dual NPN
'LS302' PDF : 1 Pages
1
LS302
MONOLITHIC DUAL
NPN TRANSISTOR
Linear Systems High Voltage Super-Beta Monolithic Dual NPN
The LS302 is a monolithic pair of high voltage Super-
Beta NPN transistors mounted in a single P-DIP
package. The monolithic dual chip design reduces
parasitics and gives better performance while ensuring
extremely tight matching.
The 8 Pin P-DIP provides ease of manufacturing, and
the symmetrical pinout prevents improper orientation.
(See Packaging Information).
LS302 Features:
ƒ Very high gain
ƒ Tight matching
ƒ Low Output Capacitance
FEATURES
HIGH GAIN
LOW OUTPUT CAPACITANCE
TIGHT VBE MATCHING
HIGH ft
ABSOLUTE MAXIMUM RATINGS 1
@ 25°C (unless otherwise noted)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation (One side)
Continuous Power Dissipation (Both sides)
Linear Derating factor (One side)
Linear Derating factor (Both sides)
Maximum Currents
Collector Current
hFE 1000 @ 1µA TYP.
COBO 2.0pF
|VBE1 – VBE2 |= 0.2mV TYP.
100MHz
65°C to +200°C
55°C to +150°C
250mW
500mW
2.3mW/°C
4.3mW/°C
5mA
MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated)
SYMBOL
CHARACTERISTIC
MIN TYP MAX UNITS CONDITIONS
|VBE1 – VBE2 |
Base Emitter Voltage Differential
‐‐
0.2
1
mV
IC = 10µA, VCE = 5V
|(VBE1 – VBE2)| / T
Base Emitter Voltage Differential
Change with Temperature
‐‐
1
5
µV/°C
IC = 10µA, VCE = 5V
TA = 55°C to +125°C
Click To Buy |IB1–IB2|
hFE1 /hFE2
Base Current Differential
DC Current Gain Differential
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTICS
MIN.
‐‐
1
5
‐‐
5
‐‐
TYP.
MAX. UNITS
nA
IC = 10µA, VCE = 5V
%
IC = 10µA, VCE = 5V
CONDITIONS
BVCBO
Collector to Base Voltage
35
‐‐
‐‐
V
IC = 10µA, IE = 0
BVCEO
Collector to Emitter Voltage
35
‐‐
‐‐
V
BVEBO
EmitterBase Breakdown Voltage
6.2
‐‐
‐‐
V
BVCCO
Collector to Collector Voltage
100
‐‐
‐‐
V
IC = 10µA, IB = 0
IE = 10µA, IC = 02
IC = 10µA, IE = 0
‐‐
1000
‐‐
hFE
DC Current Gain
1000
‐‐
‐‐
IC = 1µA, VCE = 5V
IC = 10µA, VCE = 5V
‐‐
1000
‐‐
IC = 500µA, VCE = 5V
VCE(SAT)
IEBO
Collector Saturation Voltage
Emitter Cutoff Current
‐‐
‐‐
0.5
V
‐‐
‐‐
0.2
pA
IC = 1mA, IB = 0.1mA
IC = 0, VEB = 3V
ICBO
Collector Cutoff Current
‐‐
‐‐
100
pA
IE = 0, VCB = 10V
COBO
Output Capacitance
‐‐
‐‐
2
pF
CC1C2
Collector to Collector Capacitance
‐‐
‐‐
2
pF
IE = 0, VCB = 1V
VCC = 0V
IC1C2
Collector to Collector Leakage Current
‐‐
‐‐
0.5
nA
VCC = ±80V
fT
Current Gain Bandwidth Product
100
‐‐
‐‐
MHz
IC = 200µA, VCE = 5V
NF
Narrow Band Noise Figure
‐‐
‐‐
3
dB
IC = 10µA, VCE = 3V, BW=200Hz, RG= 10KΩ,
f = 1KHz
Notes:
1. Absolute Maximum ratings are limiting values above which serviceability may be impaired
2. The reverse basetoemitter voltage must never exceed 6.2 volts; the reverse basetoemitter current must never exceed 10µA.
P-DIP (Top View)
Available Packages:
LS302 in P-DIP
LS302 available as bare die
Please contact Micross for full package and die dimensions:
Email: chipcomponents@micross.com
Web: www.micross.com/distribution.aspx
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
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