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2SC5149 View Datasheet(PDF) - Inchange Semiconductor

Part Name2SC5149 Iscsemi
Inchange Semiconductor Iscsemi
DescriptionSilicon NPN Power Transistor
'2SC5149' PDF : 3 Pages
1 2 3
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC5149
DESCRIPTION
·High Breakdown Voltage-
: VCBO= 1500V (Min)
·High Switching Speed
·Low Saturation Voltage
·Built-in Damper Diode
APPLICATIONS
·Horizontal deflection output for medium resolution display
color TV
·High speed switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO
Collector-Emitter Voltage
600
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current- Continuous
8
A
ICP
Collector Current-Pulse
16
A
IBB
Base Current- Continuous
PC
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
Tstg
Storage Temperature Range
4
A
50
W
150
-55~150
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