Description
The ACE1500B is P-Channel enhancement mode power MOSFET which is produced with high cell density and DMOS trench technology .This device particularly suits low voltage applications, especially for battery powered circuits, the tiny and thin outline saves PCB consumption.
Features
• VDS(V)=-20V
• ID=-1.6A (VGS=-4.5V)
• RDS(ON)<155mΩ (VGS=-4.5V)
• RDS(ON)<168mΩ (VGS=-2.5V)
• RDS(ON)<220mΩ (VGS=-1.8V)
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