Description
This P-Channel enhancement mode power FETs are produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device is particularly suited for low voltage application such as portable equipment, power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package.

Features
• VDS(V) =-30V
• ID=-4.5A
• RDS(ON)=68mΩ @ VGS=-10V
• RDS(ON)=83mΩ @ VGS=-4.5V
• High density cell design for low RDS(ON)