Description
The 6N135, 6N136, EL4502 and EL4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over conventional phototransistor couplers by reducing the base-collector capacitance of the input transistor. The devices are packaged in an 8-pin DIP package and available in wide-lead spacing and SMD option.

Features
• High speed 1Mbit/s
• High isolation voltage between input
   and output (Viso=5000 Vrms )
• Guaranteed performance from 0°C to 70°C
• Wide operating temperature range of -55°C to 100°C
• Pb free and RoHS compliant
• UL approved (No. 214129)
• VDE approved (No. 132249)
• SEMKO approved
• NEMKO approved
• DEMKO approved
• FIMKO approved
• CSA approved (No. 2037145)

Applications
• Line receivers
• Telecommunication equipments
• Power transistor isolation in motor drives
• Replacement for low speed phototransistor photo couplers
• Feedback loop in switch-mode power supplies
• Home appliances
• High speed logic ground isolation