General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
Features
• 5.2 A, 100 V. RDS(ON) = 0.043 Ω @ VGS = 10 V
RDS(ON) = 0.048 Ω @ VGS = 6 V.
• Low gate charge.
• Fast switching speed
• High performance trench technology for extremely
low RDS(ON) .
• High power and current handling capability.
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