General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON)and fast switching speed.

Features
• 11 A, 40 V.  RDS(ON)= 13 mΩ@ VGS= 4.5 V
• High performance trench technology for extremely low RDS(ON)
• Low gate charge (35 nC typical)
• High power and current handling capability
• RoHS Compliant