General Description
These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

Features
· Q1: N-Channel
   5.5A, 40V RDS(on) = 39mW @ VGS = 10V
                RDS(on) = 57mW @ VGS = 7V
· Q2: P-Channel
  –4.4A, –40V RDS(on) = 46mW @ VGS = –10V
                  RDS(on) = 63mW @ VGS = –4.5V
· High power and handling capability in a widely used surface mount package

Application
· Motor Control
· DC/DC conversion