General Description
These dual N- and P-Channel MOSFETs are produced using Fairchild Semiconductors advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
Features
Q1: N-Channel
■ Max rDS(on) = 26 mΩ at VGS = 10 V, ID = 6.1 A
■ Max rDS(on) = 31 mΩ at VGS = 4.5 V, ID = 5.6 A
Q2: P-Channel
■ Max rDS(on) = 39 mΩ at VGS = -10 V, ID = -5.2 A
■ Max rDS(on) = 65 mΩ at VGS = -4.5 V, ID = -4.1 A
■ 100% UIL Tested
■ RoHS Compliant
Applications
■ Inverter
■ Power Supplies
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