Qdatasheet_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

FDS6676AS

  

Datasheet PDF - Fairchild Semiconductor

FDS6676AS image

Part Name
FDS6676AS

Other PDF
  2005   lastest PDF  

PDF

page
8 Pages

File Size
527.2 kB

MFG CO.
Fairchild
Fairchild Semiconductor 

General Description
The FDS6676AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6676AS includes an integrated Schottky diode using Fair child’s monolithic SyncFET technology.

Features
■ 14.5 A, 30 V.
   RDS(ON) max= 6.0 mΩ @ VGS = 10 V
   RDS(ON) max= 7.25 mΩ @ VGS = 4.5 V
■ Includes SyncFET Schottky body diode
■ Low gate charge (45nC typical)
■ High performance trench technology for extremely low
   RDS(ON) and fast switching
■ High power and current handling capability

Applications
■ DC/DC converter
■ Low side notebook


Part Name
Description
PDF
MFC CO.
N-Channel PowerTrench® MOSFET 30V, 160A, 3.9mΩ
ON Semiconductor
N-Channel PowerTrench® MOSFET 30V, 116A, 5.1mΩ
ON Semiconductor
N-Channel PowerTrench® MOSFET 30V, 114A, 5.3mΩ
ON Semiconductor
30V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI® ( Rev : 2015 )
Diodes Incorporated.
N-Channel PowerTrench® MOSFET 30V, 94A, 5.7mΩ
ON Semiconductor
30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI® ( Rev : 2012 )
Diodes Incorporated.
30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI® ( Rev : 2015_03 )
Diodes Incorporated.
30V N-Channel MOSFETs
First Silicon Co., Ltd
30V N-Channel MOSFET
GOOD-ARK
30V N-Channel MOSFET
GOOD-ARK

Share Link: 


All Rights Reserved © qdatasheet.com [ Privacy Policy ] [ Contact Us ]