This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
‚óŹ 12 A, 30 V.
RDS(ON) = 12 mW @ VGS = 10 V.
RDS(ON) = 14.5 mW @ VGS = 4.5 V
‚óŹ High performance trench technology for extremely low RDS(ON)
‚óŹ Low gate charge (18 nC typical)
‚óŹ High power and current handling capability
‚óŹ DC/DC converter