This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
ÔŚĆ 12 A, 30 V.
RDS(ON) = 12 mW @ VGS = 10 V.
RDS(ON) = 14.5 mW @ VGS = 4.5 V
ÔŚĆ High performance trench technology for extremely low RDS(ON)
ÔŚĆ Low gate charge (18 nC typical)
ÔŚĆ High power and current handling capability
ÔŚĆ DC/DC converter