These N-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced
PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
• 7.5 A, 20 V. RDS(ON)= 0.018 Ω @ VGS= 4.5 V
RDS(ON)= 0.022 Ω @ VGS= 2.5 V.
• Low gate charge (23nC typical).
• Fast switching speed.
• High performance trench technology for extremely low RDS(ON).
• High power and current handling capability.