General Description
These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Features
• 8 A, 20 V. RDS(ON) = 17 mΩ @ VGS = 4.5 V RDS(ON) = 20 mΩ @ VGS = 2.5 V RDS(ON) = 30 mΩ @ VGS = 1.8 V
• Low gate charge (17 nC)
• High performance trench technology for extremely low RDS(ON)
• High power and current handling capability