General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on)and fast switching speed.
Features
rDS(on)= 10mΩ, VGS = 10V, ID= 11.6A
rDS(on)= 12mΩ, VGS = 4.5V, ID= 10.7A
High performance trench technology for extremely low rDS(on)
Low gate charge
High power and current handling capability
RoHS Compliant
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