General Description
This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

Features
• 7.9 A, 30 V. RDS(ON) = 22 mΩ @ VGS = 10 V
                      RDS(ON) = 36 mΩ @ VGS = 4.5 V
• Very low gate charge.
• High switching speed
• High performance trench technology for extremely
   low RDS(ON)
• High power and current handling capability in a
   widely used surface mount package.