These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
• -3.8 A, -20 V. RDS(on)= 0.075 Ω @ VGS= -4.5 V
RDS(on)= 0.105 Ω @ VGS= -2.5 V.
• Low gate charge ( 7nC typical ).
• Fast switching speed.
• High performance trench technology for extremely low RDS(on).
• High power and current handling capability.