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FDZ197PZ

  

Datasheet PDF - Fairchild Semiconductor

FDZ197PZ image

Part Name
FDZ197PZ

Other PDF
  no available.

PDF

page
7 Pages

File Size
277.4 kB

MFG CO.
Fairchild
Fairchild Semiconductor 

General Description
Designed on Fairchilds advanced 1.5 V PowerTrench® process with state of the art "fine pitch" WLCSP packaging process, the FDZ197PZ minimizes both PCB space and rDS(on). This advanced WLCSP MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, ultra-low profile packaging, low gate charge, and low rDS(on).

Features
■ Max rDS(on) = 64 mΩ at VGS = -4.5 V, ID = -2.0 A
■ Max rDS(on) = 71 mΩ at VGS = -2.5 V, ID = -2.0 A
■ Max rDS(on) = 79 mΩ at VGS = -1.8 V, ID = -1.0 A
■ Max rDS(on) = 95 mΩ at VGS = -1.5 V, ID = -1.0 A
■ Occupies only 1.5 mm2 of PCB area.Less than 50% of the area of 2 x 2 BGA
■ Ultra-thin package: less than 0.65 mm height when mounted to PCB
■ HBM ESD protection level > 4400V (Note3)
■ RoHS Compliant

Applications
■ Battery management
■ Load switch
■ Battery protection


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