Qdatasheet_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

FDZ294N

  

Datasheet PDF - Fairchild Semiconductor

FDZ294N image

Part Name
FDZ294N

Other PDF
  no available.

PDF

page
9 Pages

File Size
134.8 kB

MFG CO.
Fairchild
Fairchild Semiconductor 

General Description
Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ294N minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultra low profile packaging, low gate charge, and low RDS(ON).

Features
• 6 A, 20 V RDS(ON) = 23 mΩ @ VGS = 4.5 V
                 RDS(ON) = 34 mΩ @ VGS = 2.5 V
• Occupies only 2.25 mm2 of PCB area.
   Less than 50% of the area of a SSOT-6
• Ultra-thin package: less than 0.85mm height when mounted to PCB
• Outstanding thermal transfer characteristics: 4 times better than SSOT-6
• Ultra-low Qg x RDS(ON) figure-of-merit
• High power and current handling capability.

Applications
• Battery management
• Battery protection


Part Name
Description
PDF
MFC CO.
Dual N-Channel 2.5V Specified PowerTrench® MOSFET
TY Semiconductor
Single N-Channel 2.5V Specified PowerTrench® MOSFET
ON Semiconductor
N-Channel 2.5-V (G-S) MOSFET
Vishay Semiconductors
N-Channel 2.5-V (G-S) MOSFET
Vishay Semiconductors
N-Channel 2.5-V (G-S) MOSFET
Vishay Semiconductors
N-Channel 1.25-W, 2.5-V MOSFET ( Rev : 2004 )
Vishay Semiconductors
N-Channel 1.25-W, 2.5-V MOSFET
Vishay Semiconductors
N-Channel 1.25-W, 2.5-V MOSFET
Vishay Semiconductors
N-Channel 2.5-V (G-S) MOSFET
Vishay Semiconductors
P-Channel 2.5V Specified PowerTrench® MOSFET
ON Semiconductor

Share Link: 


All Rights Reserved © qdatasheet.com [ Privacy Policy ] [ Contact Us ]