Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
   
Features
• 90A, 150V, RDS(on) = 0.018Ω @VGS = 10 V
• Low gate charge (typical 220 nC)
• Low Crss (typical 200 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating