MFG CO.
Fairchild Semiconductor
Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Features
• 1.0 A, 800 V, RDS(on) = 20 Ω (Max.) @ VGS = 10 V, ID = 0.5 A
• Low Gate Charge (Typ. 5.5 nC)
• Low Crss (Typ. 2.7 pF)
• 100% Avalanche Tested
Part Name
Description
PDF
MFC CO.
N-Channel QFET® MOSFET 800 V, 6.6 A, 1.9 Ω
ON Semiconductor
N-Channel QFET® MOSFET 400 V, 4.5 A, 1.0 Ω
ON Semiconductor
Power MOSFET 20 A, 30 V, N−Channel DPAK ( Rev : 2014 )
ON Semiconductor
MOSFET – Power, N-Channel, DPAK 20 A, 60 V
ON Semiconductor
MOSFET –Power, N-Channel, DPAK 20 A, 30 V
ON Semiconductor
MOSFET – N-Channel, SUPERFET II 800 V, 11 A, 400 mΩ
ON Semiconductor
N-channel 30 V, 0.006 Ω, 20 A, PolarPAK® STripFET™V Power MOSFET
STMicroelectronics
Dual N-Channel 20-V MOSFET
ACE Technology Co., LTD.
Dual N-Channel 20 V MOSFET
Vishay Telefunken
20 V, N-channel Trench MOSFET
NXP Semiconductors.