MFG CO.
Fairchild Semiconductor
Description
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications..
Features
• -1.56 A, -400 V, RDS(on) = 6.5 Ω (Max.) @ VGS = -10 V, ID = -0.78 A
• Low Gate Charge (Typ. 10 nC)
• Low Crss (Typ. 6.5 pF)
• 100% Avalanche Tested
• RoHS Compliant
Part Name
Description
PDF
MFC CO.
N-channel MOSFET 60 V, 82 A, 6.5 mΩ
Renesas Electronics
N-Channel QFET® MOSFET 400 V, 4.5 A, 1.0 Ω
ON Semiconductor
400 V N-channel MOSFET
Kersemi Electronic Co., Ltd.
P-Channel QFET® MOSFET -60 V, -9.4 A, 185 mΩ
ON Semiconductor
P-Channel QFET® MOSFET -200 V, -5.7 A, 690 mΩ
ON Semiconductor
P-Channel QFET® MOSFET -60 V, -11.4 A, 175 mΩ
ON Semiconductor
IGBT 400 A 1200 V
Nihon Inter Electronics
N-Channel UniFETTM MOSFET 400 V, 26 A, 160 mΩ
ON Semiconductor
Power MOSFET −20 V, −400 mA, P−Channel SOT−23 Package ( Rev : 2016 )
ON Semiconductor
Power MOSFET −20 V, −400 mA, P−Channel SOT−23 Package
ON Semiconductor