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IRFW644B

Datasheet PDF

Part Name	IRFW644B	Fairchild Semiconductor
Description	250V N-Channel MOSFET
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General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converter and switch mode power supplies.

Features
• 14A, 250V, RDS(on)= 0.28Ω@VGS= 10 V
• Low gate charge ( typical 47 nC)
• Low Crss ( typical 30 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

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