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DESCRIPTION These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high density applications, and eliminate the need for through–the–board mounting. FEATURES • UL Recognized (File #E90700, Volume 2) • VDE Recognized (File #13616) (add option “V” for VDE approval, i.e., MOC215V-M) • Convenient Plastic SOIC–8 Surface Mountable Package Style • Low LED Input Current Required, for Easier Logic Interfacing • Standard SOIC–8 Footprint, with 0.050” Lead Spacing • Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering • High Input–Output Isolation of 2500 Vac (rms) Guaranteed APPLICATIONS • Low power Logic Circuits • Interfacing and coupling systems of different potentials and impedances • Telecommunications equipment • Portable electronics
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