MFG CO.
NEC => Renesas Technology
DESCRIPTION
The 2SC4094 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This achieved by direct nitride passivated base surface process (DNP process) which is an NEC proprietary new fabrication technique.
FEATURES
• NF = 1.2 dB TYP. @f = 1.0 GHz, VCE = 8 V, IC = 7 mA
• |S21e|2 = 15 dB TYP. @f = 1.0 GHz, VCE = 8 V, IC = 20 mA
Part Name
Description
PDF
MFC CO.
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD
Renesas Electronics
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD
California Eastern Laboratories.
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD
California Eastern Laboratories.
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD
Renesas Electronics
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD
Renesas Electronics
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
Renesas Electronics
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
California Eastern Laboratories.
NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD
Renesas Electronics
NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD
California Eastern Laboratories.
NPN EPITAXIAL SILICON TRANSISTOR 4-PIN MINI MOLD
California Eastern Laboratories.