NE334S01-T1B
Datasheet PDF - NEC => Renesas Technology
Part Name
NE334S01-T1B
Description
Other PDF
no available.
PDF
page
6 Pages
File Size
39 kB
MFG CO.
NEC => Renesas Technology
DESCRIPTION
The NE334S01 is a Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. Its excellent low noise and high associated gain make it suitable for TVRO and other commercial systems.
FEATURES
• VERY LOW NOISE FIGURE:
0.25 dB TYP at 4 GHz
• HIGH ASSOCIATED GAIN:
16.0 dB TYP at 4 GHz
• GATE WIDTH: 280 µm
• TAPE & REEL PACKAGING OPTION AVAILABLE
• LOW COST PLASTIC PACKAGE
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Part Name
Description
PDF
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