NE4210S01-T1
Datasheet PDF - NEC => Renesas Technology
Part Name
NE4210S01-T1
Other PDF
no available.
PDF
page
16 Pages
File Size
53.4 kB
MFG CO.
NEC => Renesas Technology
DESCRIPTION
The NE4210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems.
FEATURES
• Super Low Noise Figure & High Associated Gain NF = 0.5 dB TYP. Ga = 13.0 dB TYP. @f = 12 GHz
• Gate Length: Lg ≤ 0.20 µm
• Gate Width : Wg = 160 µm
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Part Name
Description
PDF
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