Description
The FFP08S60S is a STEALTH™ II diode with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.
This device is intended for use as freewheeling of boost diode in switching power supplies and other power swithching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors.

Features
• Stealth Recovery trr = 30 ns (@ IF = 8 A)
• Max Forward Voltage, VF = 2.6 V (@ TC = 25°C)
• 600 V Reverse Voltage and High Reliability
• Avalanche Energy Rated
• RoHS Compliant

Applications
• General Purpose
• SMPS, Power Switching Circuits
• Boost Diode in Continuous Mode Power Factor Corrections