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OM6501ST

  

Datasheet PDF - Omnirel Corp => IRF

OM6501ST image

Part Name
OM6501ST

Other PDF
  no available.

PDF

page
2 Pages

File Size
18.4 kB

MFG CO.
Omnirel
Omnirel Corp => IRF 

500 Volt, 5 And 10 Amp, N-Channel IGBT In A Hermetic Metal Package

DESCRIPTION
The IGBT power transistor features a high impedance insulated gate and a low on-resistance characteristic of bipolar transistors. These devices are ideally suited for motor drives, UPS converters, power supplies and resonant power converters.

FEATURES
• Isolated Hermetic Metal Package
• High Input Impedance
• Low On-Voltage
• High Current Capability
• Fast Turn-Off
• Low Conductive Losses
• Available Screened to MIL-S-19500, TX, TXV And S Levels


Part Name
Description
PDF
MFC CO.
Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package
Foshan Blue Rocket Electronics Co.,Ltd.
Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package
Foshan Blue Rocket Electronics Co.,Ltd.
Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package
Foshan Blue Rocket Electronics Co.,Ltd.
Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package
Foshan Blue Rocket Electronics Co.,Ltd.
Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package
Foshan Blue Rocket Electronics Co.,Ltd.
SINGLE ISOLATED RECTIFIER IN HERMETIC TO-257AA PACKAGE
Unspecified
Insulated Gate Bipolar Transistor, IGBT
Kodenshi Auk Co., LTD
Insulated Gate Bipolar Transistor (IGBT)
Fairchild Semiconductor
Insulated Gate Bipolar Transistor, IGBT
Kodenshi Auk Co., LTD
Insulated Gate Bipolar Transistor (IGBT)
Fairchild Semiconductor

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