DESCRIPTION
NPN silicon planar epitaxial microwave transistor with internal input prematching cell in a SOT440A metal ceramic package with base connected to flange.
FEATURES
• Input prematching cell allows an
easier design of circuits
• Diffused emitter ballasting resistors
providing excellent current sharing
and withstanding a high VSWR
• Interdigitated structure provides
high emitter efficiency
• Gold metallization realizes very
good characteristics stability and
excellent lifetime
• Multicell geometry gives good
balance of dissipated power and
low thermal resistance.
APPLICATIONS
Common base class C narrowband
pulsed power amplifiers at 1030 MHz
for IFF applications.
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