Description
The FM1608 is a 64-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile but operates in other respects as a RAM. It provides data retention for 10 years while eliminating the reliability concerns, functional disadvantages and system design complexities of battery-backed SRAM. Its fast write and high write endurance make it superior to other types of nonvolatile memory.

Features
64K bit Ferroelectric Nonvolatile RAM
• Organized as 8,192 x 8 bits
• High Endurance 1 Trillion (1012) Read/Writes
• 10 year Data Retention
• NoDelay™ Writes
• Advanced High-Reliability Ferroelectric Process

Superior to BBSRAM Modules
• No battery concerns
• Monolithic reliability
• True surface mount solution, no rework steps
• Superior for moisture, shock, and vibration
• Resistant to negative voltage undershoots

SRAM & EEPROM Compatible
• JEDEC 8Kx8 SRAM & EEPROM pinout
• 120 ns Access Time
• 180 ns Cycle Time
• Equal access & cycle time for reads and writes

Low Power Operation
• 15 mA Active Current
• 20 µA Standby Current

Industry Standard Configuration
• Industrial Temperature -40° C to +85° C
• 28-pin SOIC or DIP