Description
The FM1608B is a 64-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile but operates in other respects as a RAM. It provides data retention for 38 years while eliminating the reliability concerns, functional disadvantages and system design complexities of battery-backed SRAM (BBSRAM). Fast write timing and high write endurance make F-RAM superior to other types of nonvolatile memory.

Features
64Kbit Ferroelectric Nonvolatile RAM
• Organized as 8,192 x 8 bits
• High Endurance 1 Trillion (1012) Read/Writes
• 38 year Data Retention (@ +75°C)
• NoDelay™ Writes
• Advanced High-Reliability Ferroelectric Process

Superior to BBSRAM Modules
• No Battery Concerns
• Monolithic Reliability
• True Surface Mount Solution, No Rework Steps
• Superior for Moisture, Shock, and Vibration
• Resistant to Negative Voltage Undershoots

SRAM & EEPROM Compatible
• JEDEC 8Kx8 SRAM & EEPROM pinout
• 70 ns Access Time
• 130 ns Cycle Time

Low Power Operation
• 15 mA Active Current
• 25 µA (typ.) Standby Current

Industry Standard Configuration
• Industrial Temperature -40°C to +85°C
• 28-pin “Green”/RoHS SOIC Package