DESCRIPTION
This product is N-Channel MOS Field Effect Transistor designed for high current switching applications.
FEATURES
• Low On-Resistance
RDS(on)1 = 27 mΩ Max. (VGS = 10 V, ID = 18 A)
RDS(on)2 = 40 mΩ Max. (VGS = 4 V, ID = 18 A)
• Low Ciss Ciss =1 200 pF Typ.
• Built-in G-S Protection Diode
• Isolated TO-220 package
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