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M93C46-WDS6TG

  

Datasheet PDF - STMicroelectronics

M93C46-WDS6TG image

Part Name
M93C46-WDS6TG

Other PDF
  no available.

PDF

page
31 Pages

File Size
232 kB

MFG CO.
ST-Microelectronics
STMicroelectronics 

These electrically erasable programmable memory (EEPROM) devices are accessed through a Serial Data Input (D) and Serial Data Output (Q) using the MICROWIRE bus protocol.

FEATURES SUMMARY
■ Industry Standard MICROWIRE Bus
■ Single Supply Voltage:
– 4.5 to 5.5V for M93Cx6
– 2.5 to 5.5V for M93Cx6-W
– 1.8 to 5.5V for M93Cx6-R
■ Dual Organization: by Word (x16) or Byte (x8)
■ Programming Instructions that work on: Byte, Word or Entire Memory
■ Self-timed Programming Cycle with Auto Erase
■ Speed:
– 1MHz Clock Rate, 10ms Write Time (Current product, identified by process identification letter F or M)
– 2MHz Clock Rate, 5ms Write Time (New Product, identified by process identification letter W or G or S)
■ Sequential Read Operation
■ Enhanced ESD/Latch-Up Behaviour
■ More than 1 Million Erase/Write Cycles
■ More than 40 Year Data Retention

 


Part Name
Description
PDF
MFC CO.
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Unspecified
Two-Wire Serial EEPROM 64K (8-bit wide)
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Two-Wire Serial EEPROM 2K (8-bit wide)
Unspecified
16Kbit Serial CMOS EEPROM
Asahi Kasei Microdevices
256 bit (16 x 16 or 32 x 8) SERIAL MICROWIRE EEPROM
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8Kbit Serial CMOS EEPROM
Asahi Kasei Microdevices
Two-Wire Serial EEPROM 4K, 8K and 16K (8-bit wide)
Unspecified
Two-Wire Serial EEPROM 32K, 64K (8-bit wide)
Unspecified
Serial Peripheral Interface 128k EEPROM (16-kword × 8-bit) 256k EEPROM (32-kword × 8-bit) ( Rev : 2013 )
Renesas Electronics

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