MFG CO.
STMicroelectronics
DESCRIPTION
The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability.
It uses a Cellular Emitter structure to enhance switching speeds.
■ IMPROVED SPECIFICATION:
- LOWER LEAKAGE CURRENT
- TIGHTER GAIN RANGE
- DC CURRENT GAIN PRESELECTION
- TIGHTER STORAGE TIME RANGE
■ HIGH VOLTAGE CAPABILITY
■ INTEGRATED FREE-WHEELING DIODE
■ LOW SPREAD OF DYNAMIC PARAMETERS
■ MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
■ VERY HIGH SWITCHING SPEED
■ FULLY CHARACTERIZED AT 125 oC
■ LARGE RBSOA
APPLICATIONS
■ UP TO 120W ELECTRONIC
TRANSFORMERS FOR HALOGEN LAMPS
■ SWITCH MODE POWER SUPPLIES
Part Name
Description
PDF
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