STD11NM60N-1
Datasheet PDF - STMicroelectronics
Part Name
STD11NM60N-1
Description
PDF
page
20 Pages
File Size
607.4 kB
MFG CO.
STMicroelectronics
Description
This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
Features
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Application
■ Switching applications
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Part Name
Description
PDF
MFC CO.
N-channel 60V - 0.015Ω - 50A - D2PAK/I2PAK/TO-220/TO-220FP STripFET™ II Power MOSFET
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New Jersey Semiconductor
N-channel 600 V, 0.48 Ω, 13 A, TO-220, TO-220FP, D2PAK TO-247 Zener-protected SuperMESH™ Power MOSFET ( Rev : 2009 )
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N-channel 800V - 1.5Ω - 5.2A - TO-220/TO-220FP/D2PAK/I2PAK Zener-protected SuperMESH™ Power MOSFET
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N-channel 600 V, 1.3 Ω, 3 A TO-220, DPAK, IPAK Zener-protected MDmesh™ Power MOSFET
STMicroelectronics
N-CHANNEL800V-1.5Ω - 5.2A TO-220/TO-220FP/I2PAK/D2PAK Zener-Protected SuperMESH™ Power MOSFET ( Rev : 2002 )
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N-CHANNEL 600V - 1Ω - 6A TO-220/TO-220FP/D2PAK/I2PAK Zener-Protected SuperMESH™ Power MOSFET
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