Description
These devices are N-channel Power MOSFETs developed using UltraFASTmesh™ technology, which combines the advantages of reduced on resistance, Zener gate protection and very high dv/dt capability with an enhanced fast body-drain recovery diode.

Features
■ 100% avalanche tested
■ Outstanding dv/dt capability
■ Gate charge minimized
■ Very low intrinsic capacitances
■ Very low RDS(on)
■ Extremely low trr

Applications
■ Switching applications
   – High voltage inverters specific fo LCD TV
   – Lighting full bridge topology
   – Motor control