Description
This FDmesh™ II Power MOSFET with intrinsic fast-recovery body diode is produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, this revolutionary device features extremely low onresistance and superior switching performance. It is ideal for bridge topologies and ZVS phase-shift converters.
Features
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
■ Extremely high dv/dt avalanche capabilities
Applications
■ Switching applications
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