STP11NM65N
Datasheet PDF - STMicroelectronics
Part Name
STP11NM65N
Other PDF
no available.
PDF
page
21 Pages
File Size
1.2 MB
MFG CO.
STMicroelectronics
Description
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
Features
• 100% avalanche tested
• Low input capacitance and gate charge
• low gate input resistance
Applications
• Switching applications
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Part Name
Description
PDF
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