N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
■ TYPICAL RDS(on) = 5 Ω
■ AVALANCHE RUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100°C
■ LOW INPUT CAPACITANCE
■ LOW GATE CHARGE
■ APPLICATION ORIENTED CHARACTERIZATION
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITCH MODE POWER SUPPLIES (SMPS)
■ CONSUMER AND INDUSTRIAL LIGHTING
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