STU2N80K5
Datasheet PDF - STMicroelectronics
Part Name
STU2N80K5
Other PDF
PDF
page
22 Pages
File Size
1.5 MB
MFG CO.
STMicroelectronics
Description
These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
Features
• Industry’s lowest RDS(on) * area
• Industry’s best figure of merit (FoM)
• Ultra low gate charge
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
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Part Name
Description
PDF
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