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2SB1404

  

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Part Name2SB1404 NJSEMI
New Jersey Semiconductor NJSEMI
DescriptionSilicon PNP Darlington Power Transistor
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2SB1404 image

DESCRIPTION
• Collector-Emitter Breakdown Voltage-.. :V(BR)cEo=-120V(Min)
• High DC Current Gain- : hFE= 1000(Min)@ (VCE= -3V, lc= -1.5A

APPLICATIONS
• Designed for low frequency power amplifier applications.

 

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