DESCRIPTION
The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package.

FEATURES
• High Voltage
   - H11D1, H11D2, BVCER = 300 V
   - H11D3, H11D4, BVCER = 200 V
• High isolation voltage
   - 5300 VAC RMS - 1 minute
   - 7500 VAC PEAK - 1 minute
• Underwriters Laboratory (UL) recognized File# E90700

APPLICATIONS
• Power supply regulators
• Digital logic inputs
• Microprocessor inputs
• Appliance sensor systems
• Industrial controls