A1012Y Datasheet PDF Toshiba

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A1012Y

Datasheet PDF - Toshiba

Part Name

A1012Y

Description

TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS)

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page

3 Pages

File Size

189.7 kB

MFG CO.

Toshiba

HIGH CURRENT SWITCHING APPLICATIONS.

■ FEATURES
* Low collector saturation voltage
VCE(SAT)=-0.4V(max.) at Ic=-3A
* High speed switching time: tS=1.0µs(Typ.)
* Complementary to 2SC2562

Part Name

Description

PDF

MFC CO.

2SA1832

Transistor Silicon PNP Epitaxial Type (PCT process)

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Sensitron

2SC4667

TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS)

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Unspecified

2SA1095

Silicon PNP Epitaxial Type (PCT Process)

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Unspecified

A1273

Silicon PNP Transistor Epitaxial Planar Type(PCT PROCESS)

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KEC

2SA1270

SILICON PNP TRANSISTOR EPITAXIAL PLANAR TYPE (PCT PROCESS)

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KEC

2SA1266

SILICON PNP TRANSISTOR EPITAXIAL PLANAR TYPE (PCT PROCESS)

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KEC

2SA1272

SILICON PNP TRANSISTOR EPITAXIAL PLANAR TYPE (PCT PROCESS)

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KEC

2SA1275

SILICON PNP TRANSISTOR EPITAXIAL PLANAR TYPE (PCT PROCESS)

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KEC

2SA968

SILICON PNP EPITAXIAL TRANSISTOR (PCT PROCESS)

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Unspecified

2SA661

SILICON PNP EPITAXIAL TRANSISTOR(PCT PROCESS)

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Unspecified

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