General description
10 W LDMOS power transistor for base station applications at frequencies from HF to 1000 MHz.
Features and benefits
■ Typical 2-tone performance at a supply voltage of 26 V and IDQ of 85 mA
♦ Output power = 10 W (PEP)
♦ Gain = 18.5 dB
♦ Efficiency = 40%
♦ dim = -31 dBc
■ Easy power control
■ Excellent ruggedness
■ High power gain
■ Excellent thermal stability
■ Designed for broadband operation (HF to 1000 MHz)
■ No internal matching for broadband operation
■ SMD package.
Applications
■ RF power amplifiers for GSM, EDGE and CDMA base stations and multicarrier applications in the 800 to 1000 MHz frequency range
■ Broadcast drivers.
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