MFG CO.
Intersil
This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits.
Features
• 19A, 100V
• rDS(ON) = 0.100Ω
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Part Name
Description
PDF
MFC CO.
19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs ( Rev : 1999 )
Fairchild Semiconductor
19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs
Fairchild Semiconductor
14A, 50V, 0.100 Ohm, N-Channel Power MOSFET
Fairchild Semiconductor
14A, 50V, 0.100 Ohm, N-Channel Power MOSFETs
Fairchild Semiconductor
14A, 50V, 0.100 Ohm, N-Channel Power MOSFETs ( Rev : 2004 )
Fairchild Semiconductor
6.0A, 100V, 0.300 Ohm, N-Channel Power MOSFET
New Jersey Semiconductor
8.0A, 100V, 0.180 Ohm, N-Channel Power MOSFET
New Jersey Semiconductor
1.3A, 100V, 0.300 Ohm, N-Channel Power MOSFET
Fairchild Semiconductor
12A, 100V, 0.200 Ohm, N-Channel Power MOSFET
Harris Semiconductor
25A and 28A, 80V and 100V, 0.077 and 0.100 Ohm, N-Channel Power MOSFETs ( Rev : V2 )
New Jersey Semiconductor