MFG CO.
Intersil
This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits
Features
• 9.5A, 200V
• rDS(ON) = 0.400Ω
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
Part Name
Description
PDF
MFC CO.
11.5A, 400V, 0.400 Ohm, N-Channel Power MOSFET
Siemens AG
13A, 500V, 0.400 Ohm, N-Channel Power MOSFET
Fairchild Semiconductor
5.8A, 200V, 0.600 ohm, N-Channel Power MOSFET
Harris Semiconductor
2.25A, 200V, 1.500 Ohm, N-Channel Power MOSFET
Fairchild Semiconductor
3.5A, 200V, 0.800 Ohm, N-Channel Power MOSFET
Fairchild Semiconductor
0.8A, 200V, 0.800 Ohm, N-Channel Power MOSFET
Fairchild Semiconductor
20A, 200V, 0.180 Ohm, N-Channel Power MOSFET
Fairchild Semiconductor
Dual N-Channel, 20V, 9.5A, Power MOSFET
Will Semiconductor Ltd.
9.5A,600V N-CHANNEL MOSFET
KIA Semiconductor Technology
8A, 200V, 0.600 Ohm, Logic Level, N-Channel Power MOSFET
New Jersey Semiconductor