C3585-T2B
Datasheet PDF - NEC => Renesas Technology
Part Name
C3585-T2B
Other PDF
no available.
PDF
page
8 Pages
File Size
93.6 kB
MFG CO.
NEC => Renesas Technology
DESCRIPTION
The 2SC3585 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. The 2SC3585 features excellent power gain with very low-noise figures. The
2SC3585 employs direct nitride passivated base surface process (DNP process) which is an NEC proprietary new fabrication technique which provides excellent noise figures at high current values. This allows excellent associated gain and very wide dynamic range.
FEATURES
NF 1.8 dB TYP. @f = 2.0 GHz
Ga 9 dB TYP. @f = 2.0 GHz
|
|
Part Name
Description
PDF
MFC CO.
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISOR
California Eastern Laboratories.
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
California Eastern Laboratories.
Microwave Low Noise Amplifier NPN Silicon Epitaxial Planar Transistor
Cystech Electonics Corp.
Microwave Low Noise Amplifier NPN Silicon Epitaxial Planar Transistor
Cystech Electonics Corp.
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION
New Jersey Semiconductor
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD
Renesas Electronics
Share Link: 
